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| DN3125 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX 250V * Die in wafer form. RDS(ON) (max) 20 IDSS (min) 200mA Order Number / Package Die* DN3125NW Features High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Power supply circuits Telecom Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature BVDSX BVDGX 20V -55C to +150C 12/13/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the 1 Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. DN3125 Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSX VGS(OFF) VGS(OFF) IGSS ID(OFF) Parameter Drain-to-Souce Breakdown Voltage Gate-to-Source OFF Voltage Change in VGS(OFF) with Temperature Gate Body Leakage Current Drain-to-Source Leakage Current Min 250 -1.5 -3.5 4.5 100 1.0 1.0 IDSS RDS(ON) Saturated Drain-to-Source Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 800 150 60 6.0 3.0 120 15 10 10 15 15 20 1.8 V ns ns VDD = 25V, ID = 150mA, RGEN = 25, VGS = 0V to -10V VGS = -5.0V, ISD = 150mA VGS = -5.0V, ISD = 150mA pF VGS = -5.0V, VDS = 25V, f =1.0Mhz 200 20 20 1.1 Typ Max Unit V V mV/C nA A mA mA %/C mm Conditions VGS = -5.0V, ID = 100A VDS = 15V, ID = 10A VDS = 15V, ID = 10A VGS = 20V, VDS = 0V VGS = -5.0V, VDS = Max Rating VGS = -5.0V, VDS = 0.8 Max Rating TA = 125C VGS = 0V, VDS = 15V VGS = 0V, ID = 150mA VGS = -0.8V, ID = 50mA VGS = 0V, ID = 150mA ID = 100mA, VDS=10V RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V INPUT -10V 90% 10% t(ON) PULSE GENERATOR Rgen t(OFF) tr td(OFF) tF 10% td(ON) VDD OUTPUT 0V 10% INPUT 90% 90% (c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 2 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com VDD RL OUTPUT D.U.T. 12/13/010 |
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